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IRS20955(S)PbF
Programming Deadtime
HO (or LO)
90%
10%
Effective dead - time
The IRS20955S selects the deadtime from a range
of preset deadtime values based on the voltage
applied at the DT pin. An internal comparator
tf
translates the DT input to a predetermined dead-
time by comparing the input with internal reference
LO (or HO)
Dead-time
in
datasheet
10%
voltages. These internal reference voltages are set
in the IC through a resistive voltage divider using
V CC. The relationship between the operation mode
and the voltage at DT pin is illustrated in the
Figure 15. Effective Deadtime
A longer deadtime period is required for a MOSFET
with a larger gate charge value because of the
longer t f . . Although a shorter effective deadtime
setting is beneficial to achieving better linearity in
Class D amplifiers, the likelihood of shoot-through
current increases with narrower deadtime settings.
Negative values of effective deadtime may cause
excessive heat dissipation in the MOSFETs, leading
Figure16 below.
Dead- time
15nS
25nS
35nS
45nS
to potentially serious damage.
0.23 xVcc
0.36 xVcc
0.57 xVcc
Vcc
V DT
To calculate the optimal deadtime in a given
application, the fall time t f for both HO and LO in the
actual circuit need to be taken into account. In
addition, variations in temperature and device
parameters could also affect the effective deadtime
in the actual circuit. Therefore, a minimum effective
deadtime of 10 ns is recommended to avoid shoot-
through current over the range of operating
Figure 16. Deadtime vs. V DT
Table 1 suggests pairs of resistor values used in the
voltage divider for selecting deadtime. Resistors
with up to 5% tolerance are acceptable when using
these values.
IRS20955
temperatures and supply voltages.
>0.5mA
Vcc
R1
DT
R2
COM
Figure 17. External Voltage Divider
Table 1 Recommended Resistor Values for Deadtime Selection
Deadtime Mode R1 R2 DT/SD Voltage
DT1
<10 k Ω
Open V CC
DT2
DT3
5.6 k Ω
8.2 k Ω
4.7 k Ω
3.3 k Ω
0.46(V CC )
0.29(V CC )
www.irf.com
DT4 Open
<10 k Ω
COM
15
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